Magnetio-resistive device including a multi-layer spacer which includes a semiconductor oxide layer
US7920362B2 · kind B2 · utility
3Cited by
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16Claims
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Key dates
| Filing date | Nov 20, 2007 |
| Grant date | Apr 5, 2011 |
| Priority date | — |
| Expiry date | Oct 26, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/59683
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A giant magneto-resistive effect device having a CPP structure including a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them. The free layer functions such that its magnetization direction changes depending on an external magnetic field. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material. A semiconductor oxide layer is interposed between them. The semiconductor oxide layer forming a part of the spacer layer comprises zinc oxide as a main ingredient.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.