Mask-pattern determination using topology types
US7921385B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2006 |
| Grant date | Apr 5, 2011 |
| Priority date | — |
| Expiry date | Oct 25, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/68
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for determining a mask pattern is described. During the method, a first mask pattern that includes a plurality of second regions corresponding to the first regions of the photo-mask is provided. Then, a second mask pattern is determined based on the first mask pattern and differences between a target pattern and an estimate of a wafer pattern that results from the photolithographic process that uses at least a portion of the first mask pattern. Note that the determining includes different treatment for different types of regions in the target pattern, and the second mask pattern and the target pattern include pixilated images.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.