Semiconductor structure processing using multiple laser beam spots
US7923306B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2005 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Mar 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.