Method of forming dielectric films
US7923360B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 23, 2008 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Apr 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming dielectric films including a metal silicate on a silicon substrate comprises a first step of oxidizing a surface layer portion of the silicon substrate and forming a silicon dioxide film; a second step of irradiating ion on the surface of the silicon dioxide film and making the surface layer portion of the silicon dioxide film into a reaction-accelerating layer with Si—O cohesion cut; a third step of laminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere; and a fourth step of oxidizing the metal film and forming a metal silicate film that diffuses a metal from the metal film to the silicon dioxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.