Patent · US Active

Method for manufacturing a metal-semiconductor contact in semiconductor components

US7923362B2 · kind B2 · utility

0Cited by

16References

14Claims

0Family size

Assignee

Telefunken Semiconductors GmbH & Co. KG · DE

Inventors

Franz Dietz · Heilbronn, DE
Volker Dudek · Ditzingen, DE
Tobias Florian · Stuttgart, DE
Michael Graf · Leutenbach, DE

Key dates

Filing date	Jun 6, 2006
Grant date	Apr 12, 2011
Priority date	—
Expiry date	Jun 6, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH10F71/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for manufacturing a metal-semiconductor contact in semiconductor Components is disclosed. There is a relatively high risk of contamination in the course of metal depositions in prior-art methods. In the disclosed method, the actual metal -semiconductor or Schottky contact is produced only after the application of a protective layer system, as a result of which it is possible to use any metals, particularly platinum, without the risk of contamination.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.