Method for production of a nitride semiconductor laminated structure and an optical semiconductor device
US7923742B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2009 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Jul 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride semiconductor laminated structure comprises: a substrate; a first p-type nitride semiconductor layer formed using an organometallic compound as a Group III element source material, a p-type impurity source material, and ammonia as a Group V element source material, with the hydrogen concentration in the first p-type nitride semiconductor layer being 1×1019 cm−3 or less; and a second p-type nitride semiconductor layer on the first p-type nitride semiconductor layer formed using an organometallic compound as a Group III element source material, a p-type impurity source material, and ammonia and a hydrazine derivative as Group V element source materials, with the carbon concentration in the second p-type nitride semiconductor layer being 1×1018 cm−3 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.