Semiconductor device
US7923788B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2008 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Jun 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
Abstract
A semiconductor device has a plurality of fins formed on a semiconductor substrate to be separated from each other, a first contact region which connects commonly one end side of the plurality of fins, a second contact region which connects commonly the other end side of the plurality of fins, a gate electrode arranged to be opposed to at least both side surfaces of the plurality of fins by sandwiching a gate insulating film therebetween, a source electrode including the first contact region and the plurality of fins on a side closer to the first contact region than the gate electrode, and a drain electrode including the second contact region and the plurality of fins on a side closer to the second contact than the gate electrode. The ratio Rd/Rs of a resistance Rd of each fin in the drain region to a resistance Rs of each fin in the source region is larger than 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.