Method and structure for reducing contact resistance between silicide contact and overlying metallization
US7923838B2 · kind B2 · utility
10Cited by
7References
6Claims
0Family size
Assignee
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Key dates
| Filing date | May 19, 2008 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Nov 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.