Patent · US Active

Semiconductor device and method for fabricating semiconductor device

US7923839B2 · kind B2 · utility

4Cited by
6References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 20, 2009
Grant dateApr 12, 2011
Priority date
Expiry dateOct 9, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2221/1089
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a contact plug electrically connected to a semiconductor substrate; a first barrier metal film with a columnar crystal structure arranged in contact with the semiconductor substrate at least on a bottom surface side of the contact plug; an amorphous film made of a material of the first barrier metal film arranged in contact with the first barrier metal film at least on the bottom surface side of the contact plug; a second barrier metal film made of a material identical to that of the first barrier metal film and having a columnar crystal structure, at least a portion of which is arranged in contact with the amorphous film on the bottom surface side and a side surface side of the contact plug; and a dielectric film arranged on the side surface side of the contact plug.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.