Patent · US Active

Light emitting device with a stopper layer structure

US7923925B2 · kind B2 · utility

2Cited by
2References
25Claims
0Family size

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Key dates

Filing dateNov 19, 2008
Grant dateApr 12, 2011
Priority date
Expiry dateApr 22, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/833

Abstract

Electroluminescent (EL) devices structures are provided comprising a hot electron stopper layer structure to capture hot electrons and dissipate their energy, thereby reducing damage to the transparent conducting oxide (TCO) layer and reducing other hot electron effects, such as charging effects, which impact reliability of EL device structures. The stopper layer structure may comprise a single layer or multiple layers provided between the TCO electrode layer and the emitter structure, and may also function to reduce diffusion or chemical interactions between the TCO and the emitter layer structure. Optionally, stopper layers may also be provided within the emitter structure. Suitable stopper layer materials are wideband gap semiconductors or dielectrics, preferably transparent at wavelengths emitted by the EL device characterized by high impact ionization rates, and/or high relative permittivity relative to adjacent layers of the emitter structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.