Semiconductor memory device having improved voltage transmission path and driving method thereof
US7924592B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2010 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Jan 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor memory device and a method of driving the device which can improve a noise characteristic of a voltage signal supplied to a memory cell of the device. The semiconductor memory device includes a first semiconductor chip and one or more second semiconductor chips stacked on the first chip. The first chip includes an input/output circuit for sending/receiving a voltage signal, a data signal, and a control signal to/from an outside system. The one or more second semiconductor chips each include a memory cell region for storing data. The second semiconductor chips receive at least one signal through one or more signal paths that are formed outside the input/output circuit of the first chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.