Nitride based semiconductor laser device with oxynitride protective coatings on facets
US7924898B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Sep 24, 2008 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Apr 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.