Co-Cr-Pt-B alloy sputtering target
US7927434B2 · kind B2 · utility
23Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2005 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Jan 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/16
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided is a Co—Cr—Pt—B alloy sputtering target comprising an island-shaped rolled structure formed from a Co-rich phase based on the primary crystal formed upon casting, and a Co—Cr—Pt—B alloy sputtering target in which the island-shaped rolled structure has an average size of 200 μm or less. This Co—Cr—Pt—B alloy sputtering target has an uniform and fine rolled structure with minimal segregation and residual stress upon casting, and the present invention aims to enable the stable and inexpensive manufacture of the target, prevent or suppress the generation of particles, and to improve the production yield of deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.