Reflective photomasks and methods of determining layer thicknesses of the same
US7927767B2 · kind B2 · utility
3Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2008 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Feb 26, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/32
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A reflective photomask and a method of determining or optimizing thicknesses of layers of the reflective photomask are provided. The reflective photomask may include a substrate, a reflective layer, an absorptive pattern, and a spacer. The substrate may include a reflective region and an absorptive region, the reflective layer may be formed between the reflective and absorptive regions, the absorptive pattern may be formed on the reflective layer corresponding to the reflective region, and the spacer may be formed at an upper portion, lower portion, or inside of the reflective layer so as to correspond to the reflective region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.