Selective etching method and method for forming an isolation structure of a memory device
US7927961B2 · kind B2 · utility
3Cited by
1References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 12, 2010 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Feb 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A disclosed selective etching method comprises mixing a polymer with carbon nanotubes, applying the mixture to an etching target layer to form a carbon nanotube-polymer composite layer, forming a hard mask by patterning the carbon nanotube-polymer composite layer, such that a part of the etching target layer is selectively exposed, and selectively etching the etching target layer exposed through the hard mask. The polymer preferably includes a photoresist. Also disclosed is a method for forming an isolation structure of a memory device using the selective etching method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.