Method of reducing channeling of ion implants using a sacrificial scattering layer
US7927987B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2007 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Mar 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and devices for preventing channeling of dopants during ion implantation are provided. The method includes providing a semiconductor substrate and depositing a sacrificial scattering layer over at least a portion a surface of the substrate, wherein the sacrificial scattering layer includes an amorphous material. The method further includes ion implanting a dopant through the sacrificial scattering layer to within a depth profile in the substrate. Subsequently, the sacrificial scattering layer can be removed such that erosion of the substrate surface is less than one percent of a thickness of the sacrificial scattering layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.