GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of manufacturing GaN-based semiconductor light-emitting element, method of driving GaN-based semiconductor light-emitting element, and image display apparatus

US7928452B2 · kind B2 · utility

Assignee

• SONY GROUP CORPORATION · JP

Inventors

• Hiroki Naito · Yokohama, JP
• Hiroyuki Okuyama · Mishima, JP
• Goshi Biwa · Yokohama, JP
• Ippei Nishinaka · Yokohama, JP

Key dates

• Filing date: Mar 11, 2009
• Grant date: Apr 19, 2011
• Expiry date: Oct 13, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.