Semiconductor device having super junction MOS transistor and method for manufacturing the same
US7928470B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2006 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Nov 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A semiconductor device having a super junction MOS transistor includes: a semiconductor substrate; a first semiconductor layer on the substrate; a second semiconductor layer on the first semiconductor layer; a channel forming region on a first surface portion of the second semiconductor layer; a source region on a first surface portion of the channel forming region; a source contact region on a second surface portion of the channel forming region; a gate electrode on a third surface portion of the channel forming region; a source electrode on the source region and the source contact region; a drain electrode on a backside of the substrate; and an anode electrode on a second surface portion of the second semiconductor layer. The anode electrode provides a Schottky barrier diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.