Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor
US7928471B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2006 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Sep 3, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
A structure including a Si1-xGex substrate and a distributed Bragg reflector layer disposed directly onto the substrate. The distributed Bragg reflector layer includes a repeating pattern that includes at least one aluminum nitride layer and a second layer having the general formula AlyGa1-yN. Another aspect of the present invention is various devices including this structure. Another aspect of the present invention is directed to a method of forming such a structure comprising providing a Si1-xGex substrate and depositing a distributed Bragg reflector layer directly onto the substrate. Another aspect of the present invention is directed to a photodetector or photovoltaic cell device, including a Si1-xGex substrate device, a group III-nitride device and contacts to provide a conductive path for a current generated across at least one of the Si1-xGex substrate device and the group III-nitride device upon incident light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.