Optical semiconductor device with a distributed Bragg reflector layer
US7928472B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2008 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Jun 9, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An optical semiconductor device comprises a distributed Bragg reflector layer of a first conductivity type, an optical absorption layer, and a semiconductor layer of a second conductivity type, sequentially formed on a semiconductor substrate; wherein said Bragg reflection layer of the first conductivity type has first semiconductor layers having a band gap wavelength larger than the wavelength of incident light, and second semiconductor layers having a band gap wavelength smaller than the wavelength of incident light; and an optical layer thickness of each of said first semiconductor layers is larger than the optical layer thickness of each of said second semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.