Nonvolatile semiconductor memory and manufacturing method thereof
US7928497B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 13, 2007 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Dec 21, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0466
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory according to examples of the present invention comprises a memory cell and a peripheral transistor. The memory cell has a first intergate insulating film having a multilayer structure and provided on a floating gate electrode and an isolation insulating layer. The peripheral transistor has a second intergate insulating film having a multilayer structure and provided on a first gate electrode and a second isolation insulating layer. The first and second intergate insulating films have the same structure, and a lowermost insulating layer of the first intergate insulating film on the first isolation insulating layer is thinner than a lowermost insulating layer of the second intergate insulating film on the second isolation insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.