Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory
US7929342B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2006 |
| Grant date | Apr 19, 2011 |
| Priority date | — |
| Expiry date | Jun 20, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.