Method of fabricating halftone phase shift mask
US7932001B2 · kind B2 · utility
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4References
6Claims
0Family size
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Key dates
| Filing date | Dec 31, 2008 |
| Grant date | Apr 26, 2011 |
| Priority date | — |
| Expiry date | May 5, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a halftone phase shift mask, comprising: forming a structure by sequentially stacking a light blocking layer pattern defining a side surface and a phase shift layer pattern over a light transmitting substrate; and treating the structure with heat to make the phase shift layer pattern flow and cover the side surface of the light blocking layer pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.