Patent · US Active

Semiconductor device and method of manufacturing the same

US7932132B2 · kind B2 · utility

3Cited by
4References
44Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 24, 2009
Grant dateApr 26, 2011
Priority date
Expiry dateJul 31, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/15787
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes: a casing, a board and a semiconductor chip. The chip includes: an element part; a heat sink bonded to the element part; an insulating layer located on the heat sink so that the heat sink is located between the element part and the insulating layer; and a side wall insulating layer covering all of end faces of the heat sink. The semiconductor chip is located between the casing and the board, so that the insulating layer is directed to the casing to enable heat radiation from the heat sink toward the casing via the insulating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.