Metal gate transistor and polysilicon resistor and method for fabricating the same
US7932146B2 · kind B2 · utility
44Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2008 |
| Grant date | Apr 26, 2011 |
| Priority date | — |
| Expiry date | Jul 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating metal gate transistors and a polysilicon resistor is disclosed. First, a substrate having a transistor region and a resistor region is provided. A polysilicon layer is then formed on the substrate to cover the transistor region and the resistor region of the substrate. Next, a portion of the polysilicon layer disposed in the resistor is removed, and the remaining polysilicon layer is patterned to create a step height between the surface of the polysilicon layer disposed in the transistor region and the surface of the polysilicon layer disposed in the resistor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.