Methods of forming stacked semiconductor devices with single-crystal semiconductor regions
US7932163B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Feb 12, 2008 |
| Grant date | Apr 26, 2011 |
| Priority date | — |
| Expiry date | May 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Spaced apart bonding surfaces are formed on a first substrate. A second substrate is bonded to the bonding surfaces of the first substrate and cleaved to leave respective semiconductor regions from the second substrate on respective ones of the spaced apart bonding surfaces of the first substrate. The bonding surfaces may include surfaces of at least one insulating region on the first substrate, and at least one active device may be formed in and/or on at least one of the semiconductor regions. A device isolation region may be formed adjacent the at least one of the semiconductor regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.