Implantation before epitaxial growth for photonic integrated circuits
US7932512B1 · kind B1 · utility
6Cited by
1References
17Claims
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Key dates
| Filing date | Sep 27, 2006 |
| Grant date | Apr 26, 2011 |
| Priority date | — |
| Expiry date | Dec 8, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/102
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Fabrication of a photonic integrated circuit (PIC) including active elements such as a semiconductor optical amplifier (SOA) and passive elements such as a floating rib waveguide. Selective area doping through ion implantation or thermal diffusion before semiconductor epitaxial growth is used in order to define the contact and lateral current transport layers for each active device, while leaving areas corresponding to the passive devices undoped. InP wafers are used as the substrate which may be selectively doped with silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.