Magnetic element having reduced current density
US7932571B2 · kind B2 · utility
40Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2007 |
| Grant date | Apr 26, 2011 |
| Priority date | — |
| Expiry date | Jun 4, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes a fixed magnetic layer, a tunnel barrier layer over the fixed magnetic layer, and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure has layers or sub-layers that are weakly magnetically coupled. Thus, a low programming voltage can be used to avoid tunnel barrier breakdown, and a small pass transistor can be used to save die real estate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.