Reduced free-charge carrier lifetime device

US7932583B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Holger Ruething · Munich, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Frank Hille · Munich, DE
• Frank Pfirsch · Birkenfeld, DE

Key dates

• Filing date: May 13, 2008
• Grant date: Apr 26, 2011
• Expiry date: Sep 17, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

According to one embodiment, a semiconductor device comprises a body of a first conductivity type having a source region and a channel, the body being in contact with a top contact layer. The device also comprises a gate arranged adjacent the channel and a drift zone of a second conductivity type arranged between the body and a bottom contact layer. An integrated diode is formed partially by a first zone of the first conductivity type within the body and being in contact with the top contact layer and a second zone of the second conductivity type being in contact with the bottom contact layer. A reduced charge carrier concentration region is formed in the drift zone having a continuously increasing charge carrier lifetime in the vertical direction so that the charge carrier lifetime is lowest near the body and highest near the bottom contact layer.