Semiconductor device and manufacturing method thereof
US7932597B2 · kind B2 · utility
6Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2008 |
| Grant date | Apr 26, 2011 |
| Priority date | — |
| Expiry date | Aug 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A BGA substrate which has a back surface to which a heat radiating plate is attached and an opening for accommodating a relay wiring substrate therein, which is provided in the center of its surface, is used. The relay wiring substrate to which an ASIC chip and a memory chip are flip-chip connected, is bonded to the heat radiating plate in the opening with a thermal conductive bonding material. Further, each of the back surfaces of the ASIC chip and the memory chip is connected to a metal cap for sealing the opening through a thermal conductive material interposed therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.