Patent · US Active

Magnetic mirror plasma source and method using same

US7932678B2 · kind B2 · utility

40Cited by
38References
23Claims
0Family size

Assignee

Inventor

Key dates

Filing dateSep 13, 2004
Grant dateApr 26, 2011
Priority date
Expiry dateJan 14, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/3402
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A magnetic mirror plasma source includes a gap separating a substrate from a cathode. A mirror magnetic field extends between the substrate and the cathode through the gap. The magnetic field lines at a proximal surface of the substrate are at least two times as strong as those field lines entering the cathode. An anode is disposed such that a closed loop electron Hall current containment region is formed within the magnetic field.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.