High resolution monitoring of CD variations
US7933026B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2009 |
| Grant date | Apr 26, 2011 |
| Priority date | — |
| Expiry date | Nov 14, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/0641
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.