Semiconductor light emitting device and method of manufacturing the same
US7935554B2 · kind B2 · utility
8Cited by
6References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 19, 2009 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Mar 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.