Method for fabricating semiconductor device having radiation hardened insulators
US7935609B2 · kind B2 · utility
2Cited by
4References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 6, 2008 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Jul 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for fabricating a semiconductor device and more particularly to a method of manufacturing a semiconductor device having radiation hardened buried insulators and isolation insulators in SOI technology. The method includes removing a substrate from an SOI wafer and selectively removing a buried oxide layer formed as a layer between the SOI wafer and active regions of a device. The method further comprises selectively removing isolation oxide formed between the active regions, and replacing the removed buried oxide layer and the isolation oxide with radiation hardened insulators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.