Inventor · South Burlington, VT, US

John M. Aitken

23Patents
8h-index
18Co-inventors
72Inventor score

Filing activity: May 27, 1992 → Dec 14, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US5363550A Method of Fabricating a micro-coaxial wiring structure Emerging Cross-Sectional Technologies 77 Expired
US5444015A Larce scale IC personalization method employing air dielectric structure for extended conductors Electricity 57 Expired
US5268324A Modified silicon CMOS process having selectively deposited Si/SiGe FETS Emerging Cross-Sectional Technologies 47 Expired
US5530290A Large scale IC personalization method employing air dielectric structure for extended conductor Electricity 19 Expired
US7381981B2 Phase-change TaN resistor based triple-state/multi-state read only memory Electricity 16 Expired
US6252275A Silicon-on-insulator non-volatile random access memory device Electricity 10 Expired
US7084483B2 Trench type buried on-chip precision programmable resistor Electricity 9 Expired
US6088258A Structures for reduced topography capacitors Electricity 8 Expired
US6352902B1 Process of forming a capacitor on a substrate Electricity 7 Expired
US6159787A Structures and processes for reduced topography trench capacitors Electricity 7 Expired
US7064414B2 Heater for annealing trapped charge in a semiconductor device Electricity 5 Expired
US7943482B2 Method for semiconductor device having radiation hardened insulators and design structure thereof Electricity 3 Active
US7315075B2 Capacitor below the buried oxide of SOI CMOS technologies for protection against soft errors Electricity 3 Expired
US7935609B2 Method for fabricating semiconductor device having radiation hardened insulators Electricity 2 Active
US7601602B2 Trench type buried on-chip precision programmable resistor Electricity 2 Active
US7715248B2 Phase-change TaN resistor based triple-state/multi-state read only memory Electricity 2 Active
US7388274B2 Capacitor below the buried oxide of SOI CMOS technologies for protection against soft errors Electricity 2 Active
US7880158B2 Phase-change TaN resistor based triple-state/multi-state read only memory Electricity 1 Active
US6333239A Processes for reduced topography capacitors Electricity 1 Expired
US7791169B2 Capacitor below the buried oxide of SOI CMOS technologies for protection against soft errors Electricity 0 Active
US11485992B2 Screening and culture method Physics 0 Active
US8035200B2 Neutralization of trapped charge in a charge accumulation layer of a semiconductor structure Electricity 0 Active
US7736915B2 Method for neutralizing trapped charge in a charge accumulation layer of a semiconductor structure Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.