Optoelectronic device based on compound semiconductor quantum dots in SiGe cladding layers
US7935956B2 · kind B2 · utility
6Cited by
10References
16Claims
0Family size
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Key dates
| Filing date | Nov 1, 2007 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Jul 29, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/951
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A device having an optically active region includes a silicon substrate and a SiGe cladding layer epitaxially grown on the silicon substrate. The SiGe cladding layer includes a plurality of arrays of quantum dots separated by at least one SiGe spacing layer, the quantum dots being formed from a compound semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.