Non-volatile memory devices and methods of fabricating the same
US7936044B2 · kind B2 · utility
2Cited by
4References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2006 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Jul 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.