Non-volatile memory cell with precessional switching
US7936592B2 · kind B2 · utility
14Cited by
4References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 3, 2009 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Jan 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3286
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.