Non-volatile memory devices and systems including multi-level cells using modified read voltages and methods of operating the same
US7936601B2 · kind B2 · utility
22Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2008 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Feb 21, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3404
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods of operating a multi-level non-volatile memory device can include accessing data, stored in the device, which is associated with read voltages and modifying the read voltages applied to a plurality of multi-level non-volatile memory cells to discriminate between states stored by the cells in response to a read operation to the multi-level non-volatile memory device. Related devices and systems are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.