Method of arranging mask patterns and apparatus using the method
US7937676B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 8, 2007 |
| Grant date | May 3, 2011 |
| Priority date | — |
| Expiry date | Dec 27, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In positioning assist features on a photomask pattern to improve the image quality of the main features, the method includes deriving an h-function in a first process which represents a contribution of an assist feature with respect to image intensity at a main feature. In a continuation of the method, the position of the assist features are determined in a second process using the h-function derived in the first step. The assist features are then formed on the mask at the positions indicated. Also included is a computer readable medium having instructions for performing the h-function calculations, and the mask apparatus itself with both main and assist features positioned according to the h-function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.