Heater chips with silicon die bonded on silicon substrate and methods of fabricating the heater chips
US7938513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2008 |
| Grant date | May 10, 2011 |
| Priority date | — |
| Expiry date | Aug 1, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49401
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A heater chip has a substrate and at least one die, made of silicon, and a bond non-adhesively attaching them. The substrate, thick enough to resist bowing, has ink supply vias from back to front surfaces. The die has ink flow vias from back to front surfaces and circuitry including heater elements adjacent the front surface interspersed with ink flow vias. The at least one die is superimposed on the substrate such that ink supply vias of the substrate align with ink flow vias of the die and portions of substrate front surface and die back surface are aligned, disposed adjacent and facing one another. The bond formed between substrate and die facing surface portions is hermetic and equal in strength to a Si—O bond. By separate processing of carrier and device wafers, size and features of substrate and die can be tailored to provide a desired heater chip construction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.