Patent · US Active

Silicon wafer etching compositions

US7938982B2 · kind B2 · utility

0Cited by

16References

14Claims

0Family size

Assignee

MEMC Electronic Materials, Inc. · US

Inventors

Mark Stinson · East Alton, US
Henry F. Erk · Chesterfield, US
Guoqiang Zhang · Ballwin, US

Key dates

Filing date	Jan 2, 2008
Grant date	May 10, 2011
Priority date	—
Expiry date	May 1, 2029

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC11D2111/22
WIPO fieldBasic materials chemistry
WIPO sectorChemistry

Abstract

A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.