E-beam inspection structure for leakage analysis

US7939348B2 · kind B2 · utility

Assignee

• Chartered Semiconductor Manufacturing LTD · SG

Inventors

• Victor Lim · Pacifica, US
• Jeffrey Lam · Singapore, SG

Key dates

• Filing date: Aug 28, 2007
• Grant date: May 10, 2011
• Expiry date: Jun 7, 2028

Classification

• Technology area (CPC G): Physics
• CPC primary: G01R31/307
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A testing structure, and method of using the testing structure, where the testing structure comprised of at least one of eight test structures that exhibits a discernable defect characteristic upon voltage contrast scanning when it has at least one predetermined structural defect. The eight test structures being: 1) having an Active Area (AA)/P-N junction leakage; 2) having an isolation region to ground; 3) having an AA/P-N junction and isolation region; 4) having a gate dielectric leakage and gate to isolation region to ground; 5) having a gate dielectric leakage through AA/P-N junction to ground leakage; 6) having a gate dielectric to ground and gate/one side isolation region leakage to ground; 7) having an oversized gate dielectric through AA/P-N junction to ground leakage; and 8) having an AA/P-N junction leakage gate dielectric leakage.