Method to manufacture silicon quantum islands and single-electron devices
US7939398B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2009 |
| Grant date | May 10, 2011 |
| Priority date | — |
| Expiry date | Dec 10, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of manufacturing a single-electron transistor device is provided. The method includes forming a thinned region in a silicon substrate, the thinned region offset by a non-selected region. The method also includes forming at least one quantum island from the thinned region by subjecting the thinned region to an annealing process. The non-selected region is aligned with the quantum island and tunnel junctions are formed between the quantum island and the non-selected region. The present invention also includes a single-electron device, and a method of manufacturing an integrated circuit that includes a single-electron device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.