Wafer bonding activated by ion implantation
US7939424B2 · kind B2 · utility
1Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2008 |
| Grant date | May 10, 2011 |
| Priority date | — |
| Expiry date | Aug 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at low implant energies to ensure that the wafer material below the thin surface layers remains unaffected by the ion activation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.