Patent · US Active

Method of improving intrinsic gettering ability of wafer

US7939432B2 · kind B2 · utility

6Cited by

7References

11Claims

0Family size

Assignee

MACRONIX INTERNATIONAL CO., LTD. · TW

Inventors

Chun-Ling Chiang · Hsinchu, TW
Jung-Yu Hsieh · Saratoga Springs, US
Ling-Wu Yang · Hsinchu, TW

Key dates

Filing date	Dec 15, 2008
Grant date	May 10, 2011
Priority date	—
Expiry date	Jul 14, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/3225
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of improving the intrinsic gettering ability of a wafer is described. A first annealing step is performed to the wafer at a first temperature in an atmosphere containing at least one of oxygen gas and nitrogen gas. A second annealing step is performed to the wafer, at a second temperature higher than the first temperature, in the atmosphere.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.