Integrated circuit including memory element with spatially stable material

US7939817B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Dieter Andres · Munich, DE
• Thomas Happ · Tarrytown, US
• Petra Majewski · Munich, DE
• Bernhard Ruf · Sauerlach, DE

Key dates

• Filing date: Jul 3, 2008
• Grant date: May 10, 2011
• Expiry date: Feb 6, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

An integrated circuit includes a heater element serving as a first electrode, a second electrode, a memory element comprising resistance changing material coupled to the heater element and to the second electrode, and a diffusion compensation region coupled to the heater element and to the resistance changing material. The diffusion compensation region includes a surplus of at least one diffusible species present in the memory element and provides at least one diffusible species to the memory element.