Field effect transistor

US7939866B2 · kind B2 · utility

Assignee

• RFMD (UK) Limited · GB

Inventor

• John Stephen Atherton · Acton, US

Key dates

• Filing date: May 21, 2008
• Grant date: May 10, 2011
• Expiry date: Aug 7, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518

Abstract

A transistor includes a first electrode on a substrate, wherein the first electrode comprises a bus bar and has first and second first electrode fingers extending therefrom, the fingers being spaced apart to define a channel therebetween. The transistor also includes a second electrode on the substrate having a second electrode finger spaced apart from the first electrode and extending along the channel to define a gate region between the fingers. The gate region comprises a “curved” portion beyond the end of the second electrode finger proximate to the bus bar of the first electrode and a gate electrode extends along the gate region, through the “curved” gate portion. The substrate further comprises an active layer beneath the gate region, characterized in that the active layer extends beyond the end of the second electrode finger beneath the “curved” portion of the gate region.