Multi-dielectric films for semiconductor devices and methods of fabricating multi-dielectric films
US7939872B2 · kind B2 · utility
1Cited by
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21Claims
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Key dates
| Filing date | Mar 28, 2008 |
| Grant date | May 10, 2011 |
| Priority date | — |
| Expiry date | Jul 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.