STRAM with electronically reflective insulative spacer
US7940551B2 · kind B2 · utility
2Cited by
33References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2008 |
| Grant date | May 10, 2011 |
| Priority date | — |
| Expiry date | Aug 8, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Spin-transfer torque memory having a specular insulative spacer is disclosed. The spin-transfer torque memory unit includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, an electrode layer, and an electrically insulating and electronically reflective layer separating the electrode layer and the free magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.